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APTGT75DH60TG
Asymmetrical - Bridge Trench + Field Stop IGBT(R) Power Module
VBUS VBUS SENSE Q1 G1 CR3
VCES = 600V IC = 75A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant Max ratings 600 100 75 140 20 250 150A @ 550V Unit V A V W
E1 OUT1 O UT2 Q4 G4 CR2 E4
0/VBUS SENSE
NTC1
0/VBUS
NT C2
VBUS SENSE
G4 E4
OUT2
VBUS
0/VBUS
OUT1
E1 G1
0/VBUS SENSE
NTC2 NTC1
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current TC = 25C TC = 80C TC = 25C TC = 25C TJ = 150C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-5
APTGT75DH60TG - Rev 1,
June 2006
Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area
APTGT75DH60TG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 75A Tj = 150C VGE = VCE, IC = 600A VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 600 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Characteristic Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 75A R G = 4.7 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 75A R G = 4.7 VGE = 15V Tj = 25C VBus = 300V Tj = 150C IC = 75A Tj = 25C R G = 4.7 Tj = 150C
Min
Typ 4620 300 140 110 45 200 40 120 50 250 60 0.35 0.6 2.2 2.6
Max
Unit pF
ns
ns
mJ mJ
Diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr Er
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C
Min 600
Typ
Max 250 500
Unit V A A
Maximum Reverse Leakage Current DC Forward current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=600V
IF = 75A VGE = 0V
IF = 75A VR = 300V
di/dt =2000A/s
mJ
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2-5
APTGT75DH60TG - Rev 1,
75 1.6 1.5 100 150 3.6 7.6 0.85 1.8
2 V
June 2006
ns C
APTGT75DH60TG
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
Min
Typ
Max 0.60 0.98 175 125 100 4.7 160
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M5
2500 -40 -40 -40 2.5
SP4 Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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3-5
APTGT75DH60TG - Rev 1,
June 2006
APTGT75DH60TG
Typical Performance Curve
150 125
TJ =125C
Output Characteristics (VGE=15V)
T J=25C
Output Characteristics 150
TJ = 150C VGE=19V
125
T J=150C
IC (A)
100 75 50 25 0 0 0.5 1
T J=25C
100 IC (A) 75 50
VGE=13V VGE=15V
VGE =9V
25 0
1.5 VCE (V)
2
2.5
3
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
150 125 100 75 50 25
Transfert Characteristics 5
T J=25C
Energy losses vs Collector Current
VCE = 300V VGE = 15V RG = 4.7 TJ = 150C Eoff
4 E (mJ) 3 2
IC (A)
Er Eon
TJ=150C TJ=125C T J=25C
1 0 11 12 0 25 50 75 IC (A) Reverse Bias Safe Operating Area 175
Eoff
0 5 6 7 8 9 10 VGE (V) Switching Energy Losses vs Gate Resistance 5 4 E (mJ) 3 2 1
Eon Er VCE = 300V VGE =15V IC = 75A T J = 150C
100
125
150
150 125 IC (A) 100 75 50 25 0 35 40 0
VGE =15V TJ =150C RG=4.7
Eon
0 0 5 10 15 20 25 30 Gate Resistance (ohms)
100
200
300 400 VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration in Seconds 1 10 0.9 IGBT
0.5
0.05 0 0.00001
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4-5
APTGT75DH60TG - Rev 1,
June 2006
0.7
APTGT75DH60TG
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 80 60 40 20 0 0 20 40 IC (A) 60 80 100
Hard switching ZVS VCE=300V D=50% RG=4.7 TJ =150C Tc=85C ZCS
Forward Characteristic of diode 150 125 100 IF (A) 75 50 25
TJ=25C T J=125C TJ =150C
0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 Thermal Impedance (C/W)
Diode
1 0.8 0.6 0.4 0.2 0 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0.00001
Rectangular Pulse Duration in Seconds
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGT75DH60TG - Rev 1,
Microsemi reserves the right to change, without notice, the specifications and information contained herein
June 2006

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